Перегляд за автором "Kudryk, Ya.Ya."

Сортувати за: Порядок: Результатів:

  • A silicon carbide thermistor 
    Boltovets, N.S.; Kholevchuk, V.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, P.M.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider a silicon carbide thermistor with multilayer Au–TiBx–Ni2Si ohmic contacts intended for operation in the 77 to 450 K temperature range.
  • A subharmonic mixer for the 220–325 GHz frequency range 
    Zorenko, A.V.; Kolesnik, N.V.; Kritskaya, T.V.; Kudryk, Ya.Ya.; Marunenko, Yu.V.; Ryzhanovich, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have made a subharmonic mixer (SHM) for the 220–325 GHz frequency range with conversion losses lower than 30 dB at the intermediate frequency 3 GHz. The subharmonic mixer design was based on a GaAs mixer Schottky ...
  • A universal automated complex for control and diagnostics of semiconductor devices and structures 
    Konakova, R.V.; Rengevych, O.E.; Kurakin, A.M.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in ...
  • Degradation processes in LED modules 
    Sorokin, V.M.; Kudryk, Ya.Ya.; Shynkarenko, V.V.; Kudryk, R.Ya.; Sai, P.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Electrical-heat-light degradation model of a light-emitting module has been developed in this work. The Monte-Carlo method was used to calculate the reliability time of LED modules with different halfwidth of LED chip ...
  • Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics 
    Kudryk, Ya.Ya.; Shynkarenko, V.V.; Slipokurov, V.S.; Bigun, R.I.; Kudryk, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. ...
  • Development and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency range 
    Zorenko, A.V.; Kudryk, Ya.Ya.; Marunenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    A procedure of mm- and submm-wave devices simulation based on the up-todate simulation techniques for bulk microwave structures is proposed. We demonstrate a possibility of making microwave radiation sources based on ...
  • Development of high-stable contact systems to gallium nitride microwave diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kapitanchuk, L.M.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Sheremet, V.N.; Sveshnikov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along ...
  • Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters 
    Avdeev, S.P.; Agueev, O.A.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Milenin, V.V.; Sechenov, D.A.; Svetlichny, A.M.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC ...
  • Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity 
    Boltovets, M.S.; Ivanov, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Shynkarenko, V.V.; Sheremet, V.M.; Sveshnikov, Yu.N.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with ...
  • Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The electrophysical measurements of Schottky barrier diodes ...
  • Hybrid-integrated version of SBD amplitude detector intended for the 400–600 GHz frequency range 
    Zorenko, A.V.; Bychok, A.V.; Shynkarenko, V.V.; Kudryk, Ya.Ya.; Slipokurov, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A finline version of detector with flat Schottky barrier diodes is developed. It is intended for operation in the 400600 GHz frequency range. The detector electrical parameters are studied. The detector conversion ratio ...
  • Hybrid-integrated version of solid-state components for terahertz frequency region 
    Zorenko, O.V.; Bychok, A.V.; Kryts’ka, T.V.; Kudryk, Ya.Ya.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present the results of development of key components for THz devices obtained using mathematical modeling of detector sections, radiation source and subharmonic mixers. Schottky barrier diodes with different parameters ...
  • Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features 
    Dmitruk, N.L.; Karimov, A.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or ...
  • Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Naumov, A.V.; Panteleev, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential ...
  • Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors 
    Slipokurov, V.S.; Dub, M.M.; Tkachenko, A.K.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation ...
  • Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors 
    Slipokurov, V.S.; Dub, M.M.; Tkachenko, A.K.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation ...
  • New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis 
    Arsentyev, I.N.; Bobyl, A.V.; Tarasov, I.S.; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Kamalov, A.B.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. ...
  • Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis 
    Belyaev, A.E.; Bobyl, A.V.; Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Konnikov, S.G.; Kudryk, Ya.Ya.; Markovskiy, E.P.; Milenin, V.V.; Rudenko, E.M.; Tereschenko, G.F.; Ulin, V.P.; Ustinov, V.M.; Tsirlin, G.E.; Shpak, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the ...
  • Ohmic contacts based on Pd to indium phosphide Gunn diodes 
    Belyaev, A.E.; Boltovets, N.S.; Bobyl, A.V.; Zorenko, A.V.; Arsentiev, I.N.; Kladko, V.P.; Kovtonyuk, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact ...
  • Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures 
    Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V.; Lytvyn, O.S.; Kapitanchuk, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) ...